The CMOS block RAM cache of 128×32 bits and the block of multiport RAM (the register file) of 32×64 bit on the basis of DICE cells with increased distance between sensitive units are characterized by failure threshold energy of memory cells 3.55-4.05 nJ at influence of laser radiation pulses. These values by 20 times exceed failure thresholds of the block of 65-nanometer CMOS cache and by 3.5 times of the block of multiport 65-nanometer CMOS RAM (the register file) on six-transistor memory cells. In RAM blocks on the basis of DICE cells there are no multiple failures unlike RAM blocks on the basis of six-transistor cells.

Results of experimental researches of radiation resistance of powerful n-channel MOS transistors IFP50N06at at gamma radiation So⁶⁰ influence are presented.

Influence of electrons with energy of 4 MeV and gamma radiations Co⁶⁰ on characteristics of complementary bipolar transistors is researched. It is established that influence of electron fluence F_E = 3·10¹⁴ cm^-2 causes recession of the maximum of current transfer coefficient β of n-p-n-transistors for 50 %, p-n-p – for 65 %, reduction of the maximum of cutoff frequency f_T of n-p-n-transistors for 12 %, p-n-p – for 4 %. At absorbed dose of gamma radiation D_G = 3 Mrad is recorded reduction β 35 % for n-p-n-transistors, 53 % for p-n-p, f_T –10 % for n-p-n, 11 % for p-n-p.

The problem of resistance of onboard equipment of spacecrafts by means of existing element base can be solved by specification of local doses for separate electronic products, by use of incremental linking of onboard equipment and by installation of local additional protection. As the mass of spacecraft is critical, the additional protection of devices has to be optimum. Therefore, the accuracy of calculation of absorbed doses is of great importance. In this article the project of the bench for their measurement and creation of geometrical model of blocks for use in calculation programs of local radiation dose is offered.

The developed model of the bipolar silicon epitaxial and planar n-p-n-transistor based on its equivalent circuit allowing to consider the change of transistor parameters during neutron radiation is presented. The simulation of operation of inverter circuit based on this transistor at neutron radiation are also resulted.

Questions of element base creation for computer-aided design of asynchronous and self-synchronous on circuits on the example of development of C-elements, important for this device class, are considered. Three options of failure tolerance implementation of C-element based on DICE cell are offered.

Results of theoretical research of influence of cumulative dose on current-voltage characteristics of power semiconductor devices based on silicon are presented. It is shown that unlike low-power devices at which the radiation leads to falling of threshold voltage and building up of differential resistance, the threshold voltage of power devices under the radiation influence, as a rule, grows, and differential resistance practically doesn´t change.

The theoretical assessment of the efficiency of electric power sources based on various structures of beta voltaic elements with Ni-63 isotope is given. For estimating the model of carrier generation of space charge and the results of numerical solution of continuity equations and expression for current density are used. Three structures are consider: a structure with thin base to a thickness of 10-15 μm, the depth structure with slits 100 μm, with p-n-junction on the walls, and double-sided structure with two p-n-junctions and additional metal-oxide-semiconductor junction. Calculations showed that the last structure was the most effective with an efficiency of 2.4 % and specific current per unit volume of 0.5 mA/cm³.

Results of analysis of influence of dose rate and ionizing radiation energy on dose sensitivity of electrical parameters of silicon integrated circuits in temperature operating range are presented. The equivalence of gamma and X-ray radiation on dose effects are estimated.

It is shown that the power semiconductor devices made by thermomigration method are more resistant to radiation influence in comparison with diffusion analogs. It is found out that this result is connected with two factors. First, the thermomigration method allows to optimize thickness of a basic layer of the device, secondly, to receive sharper distribution of doping impurity in the emitter.

The test bench for measurement of charge carrier mobility and recombination time in diamond sensors of ionizing radiation is developed. The researches of these parameters in a diamond monocrystal plate of electronic quality (scCVD) with thickness 300 microns allowed to estimate recombination time.

The processes influencing on charge collection in diamond spectrometer sensor of ionizing radiation are experimental researched. It is shown that features of device operation at high loading can be explained with accumulation of electric charge in sensor material. The size of this charge for scCVD plate of 3×3 mm² and 300 microns thick is estimated.

The parametrical analysis based on an estimation method of probability of non-failure operation of redundant trigger elements of memory is considered. Ratios and results of calculation are given. Problems of a choice of optimum structural decisions which provide the best resistance and failure tolerance of microprocessors at the maximum speed, performance and the minimum technological, topological and constructive expenses demand the preliminary comparative analysis of different circuitry and functional decisions when developing redundant microprocessors. It is shown that the failure tolerance of basic flip-flops has the defining meaning for indicators of non-failure operation of memory cells for redundant circuits.

The automated monitoring and control system by small-sized pulse accelerators type ARSA is developed. This system provides operation of small-sized pulse accelerators in the mode of dose set and in single mode, monitoring of accelerator operation, documenting of test process. The automated monitoring and control system is high noise-immunity thanks to a full fiber-optical coupler.

The ARSA accelerator is metrological certified in electron mode for examination of sensitivity of integrated microcircuits to the thyristor effect. An absorbed dose per pulse and diameter of electronic beam at a distance of 1 cm from the tube are measured. All the parameters correspond to the documentation. The mean energy reached 0.4 MeV. The dependences of absorbed dose on a distance from the tube and on a beam cross-section are determined. An angle of emitted radiation from the axis is 11⁰. The stability of accelerator parameters by mean square deviation is measured.

A metrological certification of detectors of technique М 193 is successfully complete. Ranges of technique application on accelerator RIUS-5 for dose rate from 2·10⁶ to 4·10¹⁰ R/с and for dose from 30 mR to 800 R per pulse are received. It is established that the technique М 193 corresponds to documentation requirement. The total error of the maximum dose rate measurement is less than 30 %. An experimental using of technique М 193 on accelerator RIUS-5 is begun. Mean maximum dose rate near target is about 10 % more, than at the control point using effective pulse duration.