Spatial diversity of VLSI registers for minimizing frequency of repeated faults under the impact of heavy charged particles is validated. The simulation results of fault ratio in the processor modules framed under current experimental development are summarized. The methodology for distributing VLSI sensitive elements under standard composite function of modern computer-aided design tools is introduced.

The application results of the combinational circuit fault-tolerance evaluating method for the register file reading system fault analysis are presented. Transient phenomena induced by single particles falling into the reading system elements having different operation principles are described and analyzed.

Average cash-memory access time depending on L1 cash-memory size with different L1 and L2 implementation variations – on DICE and 6T cells with and without error correcting codes is analyzed.

One of the result handling methods for digital integrated circuit tests for resistance to the impact of heavy charged particles or ions of various space energies, which consists in peculiarities of single event upset cross-section dependence in the area of linear energy transfer (LET) minor values, is presented.

The ambiguity of the traditional method of the approximate soft error rate (SER) evaluation based on the figure of merit approach is shown, and a new formula for compact SER modeling is proposed. Based on new parameterization of the cross-section vs. LET dependence, a new procedure for the heavy ion-induced SER calculation is proposed.

The experimental data and parameter change dependences of CMOS IC MOS transistors under low-intensity gamma radiation with dose rate of 0.1 and 1.0 rad/s are presented. The implementation of the subthreshold current method for determining the number of radiation induced interface traps is demonstrated. Two-stage interface trap generation process is confirmed.

The methodology for MOS transistor application as dose budget detectors is introduced. The methodology is found on physically based dose dependence of p-channel MOS transistors on absorbed dose. Based on calibration results via the electro-physical model of dose effects, the numerical values of current-voltage characteristic dose dependence parameters are determined, which serves as the basis for the absorbed dose value calculation based on measurement results of the MOS transistor drain current in after-threshold behavior.

The MAX280, IRFL4105, CDCLVC1102, MSA2805, MSA2815, ADM2486, TPS62040 and TPS3823 product test results in active and passive electric modes are presented. The radiation resistance of products by dose effect in active and passive modes is distinguished, which should be taken into consideration, when estimating radiation resource of spacecraft onboard equipment with ‘cold’ backup.

The annex of the RD V 319.03.31 regulations to the tests of the multi-element electronic products for resistance to special factor effect is studied. It is demonstrated that the application of this RD regulations makes it difficult to estimate resistance to special factor effect of such products.

Modern radiation test methods require generation of the gamma radiation pulses on simulator in duration range of 0.01÷3.0 μs at constant dose rate level. The dependence of current pulse leading edge duration in a tube diode and bremsstrahlung pulse characteristics in the focused beam generating mode on the electro-explosive circuit breaker parameters (number of conductors, their cross-section and length) on UIN-10 is determined. In order to correct the pulse trailing edge a bare “chopping” gap is introduced into the accelerator design, which is installed between the electro-explosive breaker and the peaking gap.

UIN-10 accelerator modernization is performed, which allowed enhancing the repeatability of the gamma radiation pulse characteristics by using a cathode cell-type tube in the circuit before diode tube.

In order to improve the UIN-10 performance a construction design of the cathode-anode assembly is developed, which provides for the gate installation and quick target change without vacuum removal. The construction design also allows measuring target current in permanent beam configuration.

The influence of pressure in surge peaking gap on high-voltage pulse generation in the UIN-10 accelerating tube is studied. It is shown that as the pressure in the peaking gap grows, the high-energy component of electron radiation and bremsstrahlung spectra increment, the leading edge time reduces, and bremsstrahlung pulse duration and form changes.

A current transducer design with a chip-resistor shunt for measuring nano and subnanosecond current pulses ranged up to 1000 A is introduced. The current transducer is dedicated to measuring single components of structured currents in order to study their distribution through the aircraft design elements.