The methodical features of preparation and carrying of hardness tests for heavy ions impact of gate-array chips as exemplified by 1592HM3U-006VP IC are reviewed. The main stages and features of the development of functional checkout algorithm and single event effect registration methods, and software for the heavy ions hardness tests are demonstrated.

The features of the digital transmitter receiver hardness test methods for heavy ions impact including algorithms of functional checkout and single event registering methods are covered.

A simulation of the FILIN-122/160 complex X-ray radiation effect on high-power MOS transistor with vertical structure in the developed by authors program based on Geant4 libraries is carried out. The generation of the positive charge profile accumulated in the MOS transistor oxide influenced by ionizing radiation, and its effect on product radiation response are under discussion. The comparison of the simulation results with the available experimental data has shown the application possibility of the developed program in support of radiation tests for absorbed dose influence.

Experiments on CMOS IC CD4069UBCN irradiation by gamma rays at three dose rates are carried out. Change of surface defects density is determined. The presence of two stages of defect formation is shown.

The issues are considered as related to selecting most suitable time and electric mode for onboard equipment critical part back-up in order to extend terms of active existence of spacecrafts. The back-up effect on spacecraft hardness to dose effects and single event effects under conditions of long-term exposure to ionizing radiation of space environment is reviewed.

Modern technologies for semiconductor microelectronic circuity product manufacture and their influence on modern IC chip and semiconductor device hardness to dose effects and single event effects in the space environment ionizing radiation conditions are reviewed.

The research results of the parameter change in the IR-LEDs manufactured on the basis of double AlGaAs heterostructures influenced by ⁶⁰Со gamma-quantum depending on radiation temperature are presented. Based on the research results it is established that there are several consecutive stages of photo diode radiation power reduction under the ionizing radiation influence. Temperature increase under gamma-quantum radiation leads to radiation hardening at the first stage due to radiation-induced defect annealing, which leads to decrease in relative contribution of the first stage into general power reduction. It is established that under radiation temperature of 380 K the first photo diode power reduction stage is eliminated completely. At the second stage the observed hardening is determined only by reduction in relative contribution of a lesser hardened first stage into general radiation power reduction.

Destructive single event gate rupture (SEGR) occurring in the gate oxides of power MOSFETs under impact of heavy ions is studied and modeled. SEGR cross section of power MOSFET with 70 nm oxide thickness as function of gate voltage was measured for four types of heavy ions. A predictive formula for the SEGR cross section is derived and validated. This formula can be used as a predictive instrument for computation of survival probability in a given spectrum of heavy ions in space environments.

Possibilities of laser imitation technique with application for radiation hardness assurance and control for on-board radio-electronic equipment in terms of single event effects, as an example of SRAM UT6264 CPCL-70LL tests on ion accelerator and laser simulator are presented.

A small pulse ARSA-M and Argument-M accelerator (SPA) based workstation is developed for carrying radiation research and tests of electronic products for 7.I.-type special factor impact.