Results of tests to special factors impact of the solid-state microwave electronics created on the basis of different materials are generalized. The main problems of this products test are described. Ways of test methods development are offered.

The neutron irradiation influence on breakdown voltage U_bd and limiting voltage U_lim of the limiters are studied. It is established that the relation value U_bd(Ф)/U_lim(0) practically doesn´t depend on the initial U_bd(0), and also on the initial silicon specific resistivity. The calculation method of voltage limiter radiation hardness is proposed considering its geometric characteristics, initial silicon specific resistivity, original values of breakdown voltage and limiting voltage, limiting current and impurity concentration gradient.

Accounting methods of ambient temperature influence on the informative parameter drift of absorbed dose detector are presented. The developed methods allow to consider temperature drift of a drain current of the IC p-channel transistors used as absorbed dose dosimeters and to minimize a measurement error of the absorbed dose from temperature conditions.

The experimental results on the change in current-transfer ratio (CTR) for optocouplers with a bipolar phototransistor output under the irradiation by gamma rays, fast reactor neutrons, high-energy protons and electrons are presented. Basing on the presented results it is shown that the change in CTR of optocouplers in actual space conditions during operation on orbit cannot be obtained as a simple combination of curves, which describe the change in CTR versus total ionizing dose (TID) and the change in CTR versus displacement damage dose (DDD). In some cases such a combination can really be found, however it cannot be considered as a universal function suitable for the description of radiation response of all kinds of optocouplers in each type of space radiation conditions. The paper puts forward a method for radiation testing of optocouplers intended for space application that takes into account the degradation in actual space conditions due to both TID and DDD effects.

Spatial and temporal distributions of pixels with big value of the dark current in the CCD arrays irradiated with protons and neutrons on the synchrocyclotron PNPI are considered. Data on solder joint clusters formation in the irradiated matrixes is provided.

Evaluation results of relative efficiency of electron impact with energy in a range to 1.8 MeV and Co⁶⁰ gamma radiation on CMOS LSI 1632PT1T are presented.

The experiments are made on irradiation of power supplies for sea and land application resistant to C3 factor influence, equal 2U and multichannel power supplies with telemetry functions for space application with hardness on key parameters to 1.15·2U. It is shown, that mainly on home element base developed power supplies conform to high requirements for radiation hardness and can be used in the space equipment with long active shelf life, and also in the special-purpose equipment.

Features of latch-up dynamics in CMOS integrated circuits by action of pulse bremsstrahlung are considered. The possibility of use of the critical charge concept for the analysis of experiment results at volume and local ionization of thyristor structure is shown. The technique of the integrated circuits selection tolerant to latch-up at heavy charged particles action with pulse bremsstrahlung use is offered.

The prototype of the subnanosecond electron accelerator based on the small-size accelerator ARSA with the gas-filled shaper (nitrogen ~ 4 MPas) is developed and probed. The operation principle of the shaper consists in charging of the short accumulative line and its discharge to the step line with the accelerating tube generating electrons. The current pulse duration of an electron beam doesn´t exceed 0.3 nanoseconds, current amplitude ~ 1 kA.

It is shown that dosimetric support of radiation tests and sample researches can be qualitatively improved by measuring not only dose, but also spectral and energetic bremsstrahlung characteristics. The technique and the device for measurement of integral and dynamic-response bremsstrahlung characteristics of pulse electron accelerators are offered.