The approach to prediction of multiple failures in digital LSI integrated microcircuits at heavy ions influence is offered, taking into account such factors as radial distribution of ionization density in heavy ions track, fluctuation of heavy ions linear energy transfer when passing through the IC sensitive volume and diffusion charge collection by the low-level memory cells getting to a track zone.

By results of publications about charge carrier mobility in polymeric materials the primary measured data in a time-of-flight experiment of carrier speed is recovered. It is established that the restored charge carrier speed is uniform in film thickness in 19 of 22 independent experiences that means a trap energy homogeneity in the majority of materials. Arrhenius speed relation in three (from seven) independent experiences for polyvinyl carbazole are linear and are crossed near ordinate axis that means no contradiction of the theory and an experiment in polyvinyl carbazole, which is observed in case of mobility.

The results of researches by atomic force microscopy methods of morphology of the K-208 and CMG glasses, irradiated by electrons, are comparative analyzed. It is shown, that the quantity and height of microirregularities and depth of the bit channel-parameters characterizing the structural changes of glass surfaces, caused by electrostatic discharges at radiation in identical conditions, significantly differ.

The radiation resistance of microcircuits DS18B20, DS18B20+ and DS18B20/GG8 at gamma radiation impact on installations with the isotopic sources ⁶⁰Co is researched. It is shown that the radiation hardness of chips DS18B20 depends on ambient temperature, chip supply voltage and gamma dose rate.

The photoconverters based on GaAs-InGaAs heterojunctions and designed for laser radiation wavelength of 970±30 nanometers are considered. The technique of their resistance researches to pulse ionizing radiation impact and measurement results are presented. The degradation level of structure characteristics after different type of radiations influences is shown.

Theoretically and experimentally the electrophysical properties of photodiodes on the basis of silicon-on-sapphire structure are researched. It is shown that their key parameters do not concede to silicon diodes and the level of radiation hardness is more, than at similar diodes on volume silicon.

The technology and algorithm of simultaneous reproduction of preset values of neutron fluence with power more than 0,1 MeV and gamma exposure dose which are the norms of electronic equipment tests on the reactor PRIZ-M are considered. The parameters of radiations in near-field zone of the reactor are analyzed, including at using the devices converting a part of neutrons into gamma quanta.