The proton soft error rates calculation technique of commercial memory circuits based on heavy ions data is offered. Soft error rates by means of Monte Carlo simulation of secondary particles LET-spectra in the circuit’s sensitive slab are calculated. The calculation procedure by the direct comparison with on-board data is verified.

A calculation-experimental method of prediction the level of free-failure functioning of bipolar integrated circuits in the conditions of pulse gamma-neutron radiation influence is considered. The level of free-failure functioning is estimated by the critical parameter U_OL – low-level output voltage, which degradation defines radiation resistance of bipolar digital integrated circuits as a whole. For estimation of production reserve on U_OL and estimation of its degradations speed under the action of gamma-neutron pulse the forecasting parameter I_OLMAX – maximum low-level output current is measured as low-level output voltage 1,0-2,0 В before and in process of radiation influences. Value of I_OLMAX defines the load of output transistors and the estimation of its change allows to forecast the value of free-failure functioning level in conditions of pulse gamma-neutron radiation influence.

The possibility of calculation-experimental prediction of dose effects and radiation resistance of CMOS integrated circuits by the use of predestining parameters value – reference value of switching voltage and absolute useful current step-up after test radiation action is shown.

The prototype of space particles registration block is developed and made. The prototype in proton, electron and gamma fields is tested. The accuracy indicators of measurement of absorbed dose rate in silicon of proton and beta radiations are received. The radiation hardness of the prototype is defined.

Radiation effects in powerful MOS devices caused by bremsstrahlung pulse of the accelerator and action of separate neutrons with energy of 14 MeV are researched. On the basis of temperature and dose dependence, it is shown that the single event effect is caused by field multiplication of the charge carriers generated in interaction of a thermonuclear neutron with substance.

The scheme and appearance of the device for measurement of neutron energy spectrum with the measuring block based on activation detectors are provided. The calculated response functions of detectors at different distances along an axis of the measuring block depending on neutron energy in the range of 0,25-14,0 MeV and also results of neutron spectrum reconstruction at distance of 12 m from the PRIZ-M reactor are presented.