Using the analytical model of global current leakage under STI insulating oxides of CMOS IC are described the experimental dose dependencies of leakage currents in DS18B20 digital circuit, obtained under various irradiation conditions: for different values of radiation dose rates, for different irradiation temperatures and for various electrical modes. The modelling shows that the used model very successfully describes all observed experimental dependences. In addition, it is established that the model is capable of describing the differ-ences observed when irradiating CMOS IC at different sources of ionizing radiation, in particular, at 10 keV X-rays and gamma radiation. It is also shown that the model can be effectively used as a preliminary predict-ing of CMOS IC hardness at the stage of their technological design.

Results of experimental researches of various NOR flash memories at gamma irradiation are presented. The received results in comparison with literary data is analyzed. It is shown that the peripheral equipment has the considerable influence on NOR flash memory hardness to gamma irradiation which also strongly depends on the irradiation mode: the dynamic mode "erasing-reading-record-reading" is the hardest, and the passive mode without electric loading at irradiation – the least hard.

The theoretical and experimental justification of development possibility of a method of margin diagnosis of digital CMOS microcircuits functioning as a part of radio-electronic equipment at static gamma radiation influence based on the physical principles of transfer characteristics degradation of p- and n-channel transistors from chips structure is presented.

Results of experimental researches of operating of ferroelectric non-volatile RAM 1666PE014 manufactured on FRAM technology at special factors influence are presented. Dose levels of chips failures depending on the operating modes (reading, recording, rerecording) and also from the electric mode at radiation are speci-fied.

Results of researches of Co⁶⁰ gamma radiation influence on functioning, static and dynamic parameters of the SOI trigger flip-flop at various electric modes are presented.

The measuring complex developed for electric parameters monitoring of secondary power sources by resistance tests to heavy ions influence is presented.

The use possibility of UKPN-1M accelerator as the simulating at resistance estimation of electronic compo-nent base to influence of space proton radiation is shown. Technical and metrological data of UKPN-1M accelerator, intended for checking of dosimeters and radiometers of neutron radiation are given. The certifi-cation difficulties of UKPN-1M accelerator are described.

Results of mathematic simulation of neutron radiation parameters of reactor PRIZ-M on the open area for tested large-size subjects are presented. The linear size of a zone, where the radiation tolerance ripple of tested subject is determined. The perspective version of the technical solution providing local and cyclic radiation of tested large-size subject is offered.

Calculating dependences of radiation spatial nonuniformity of a tested subject on his linear size and distance from radiation source are presented. The graphic way of determination of the minimum distance from an active zone of research nuclear reactor PRIZ-M is illustrated. The nuclear reactor provides radiation tole-rance ripple on all length of a large-size tested subject.

The questions connected with ensuring the demanded by normative documents nonuniformity of gamma and neutron fields of the static nuclear reactor PRIZ-M at radiation resistance tests are considered. The definition of test volume is given. Сalculating dependences of length, width and height of test volume on distance to a reactor active zone are presented.

Results of experimental researches of radiation reaction of secondary power supply source and diode assembly on pulse gamma and X-ray radiation influence of the simulating installation Trans-4-1 are presented. The interaction of radiation reaction of secondary power supply source and connected elements of radio-electronic equipment at pulse gamma radiation influence is established.