The calculated-experimental forecasting technique of CMOS chips functional failures in the radio-electronic equipment is presented. The forecasting technique is the physically based model of CMOS chips functional failures by the absorbed dose of static gamma radiation. The technique allows to predict the absorbed dose value at the CMOS chip failure depending on its application conditions in the electronic equipment.

Features of calculation assessment method of radiation hardness of serial semiconductor devices based on physical topological simulation by the lack of full information about their design are considered. The method is created and approved for missing data determination on semiconductor devices design from current-voltage and capacitance-voltage dependences for p-n-transitions and Schottky barriers, and also from tabular data on parameters of serial semiconductor devices for the assessment of heating temperature of active areas of semiconductor devices and determination of their radiation hardness. The system of calculation assessment of radiation hardness for various classes of serially manufactured semiconductor devices on the basis of unified approach to their simulation is for the first time offered.

This research is aimed at development and investigation of a fiber optic dosimeter for dose rate measuring of X-ray and gamma radiation sources. To determine the fiber optic dosimeter sensitivity the numerical calculations by the Monte-Carlo method using Geant4 simulation toolkit are performed. The results of the numerical calculations are very well conformed with the results of experimental studies. Thereby the experimental studies show that the device is steadily sensitive to radiation sources with dose rate values in the range of 1 to 17 mGy/s.

The possibilities of providing radiation resistance of fiber-optic power transmission system to electronic devices based on the use of powerful continuously operating laser as an energy source are considered. As laser detectors in this system are used the photo converters based on GaAs/AlGaAs heterojunctions. The results of researches of radiation hardness of elements of the system and the system in general are considered.

The trajectories of interorbital transfer of the electric propulsion system vehicles from low earth orbit into geostationary orbit is analyzed. Influence of solar activity and thickness of radiation protection on efficient choice of trajectory parameters of spacecraft transfer into geostationary orbit by criterion of the minimization of accumulated during flight dose of space ionizing radiation is investigated.

Approach to parameters assessment of pulse ionizing radiation field in flight elements by the Monte Carlo method with use of TRIADА program is stated. All main features of interaction of radiation with the existing and perspective materials are considered.