The components of radio electronic equipment separately and as part of equipment on synchrocyclotron S-1000 in PNPI named by B.P. Constantinov with proton energy of 1000 MeV were tested. The compliance of the test reaction of individual elements of radio electronic equipment to proton impact with the test results of elements as part of equipment was checked. The radio electronic equipment resistance based on the data of its individual elements hardness was quantified. The resistance indices of radio electronic equipment obtained by calculation-experimental and experimental methods was comparative analyzed.

The influence of fast neutron flux and associated gamma radiation on CMOS SOI transistor characteristics is considered. Using the Monte Carlo method, the irregularities in collision cascades at neutron radiation of SOI structures are calculated. Experimental data on irradiation of test transistor structures confirm the calculation results on reduction of their dose sensitivity at combined gamma neutron radiation.

The study of properties of MOS transistors gate oxides irradiated with heavy ions by measuring "charge to breakdown" is resulted. The effect on the results of the electric mode under irradiation and the particles incident angle is discussed. For the first time, the evidence of the gate current "telegraph noise" occurrence in partially burnt-out samples is given.

The results of research of spectrum, kinetics and energy output of YAG:Nd³⁺ luminescent crystals at their irradiation with pulses of bremsstrahlung and electron radiation with average energies 1 and 2 MeV respectively are presented.

The results of the study of the static current-voltage characteristics of a silicon diode p+-n-n+n++-structure subjected to gamma radiation are presented. It was found that under the influence of gamma irradiation with a dose of Ф_γ = 5∙10¹⁶ cm^-2 the direct voltage drop decreases to 10 % due to the formation of radiation centers in the local region of the order of 1 μm at the boundary of the p-n junction. These radiation centers, in turn, lead to a change decrease in the gradient of concentration of the main charge carriers in the base region of n-type silicon, and a slight decrease in the breakdown voltage is associated with shunting of the rectifying p-n-junction by the metal-insulator-metal- junction. In this case, the appearance of an additional section with an exponent of 8 before the breakdown can be associated with breakdown phenomena through a radiation-treated insulator, in this case a microplasma breakdown in the insulator is possible.

A method for rapid estimation of effective values of maximum dose rate and pulse duration of accompanying gamma radiation of pulse gamma neutron simulators is proposed. The efficiency of gamma radiation is estimated with respect to the radiation of reference simulators. The method makes it possible to quickly determine the effective value of the maximum dose rate at a given point of the radiation field immediately after the simulator pulse and to estimate the effective gamma duration without using a special sensor with integration of its output signal during change of this signal in the range of several orders.

Preliminary assessment of annealing of structural damages in silicon-based products after pulse gamma neutron radiation on simulator BARS-4 and holding of irradiated products in passive mode is obtained. The evaluation was carried out by measuring the static current transfer coefficient of the base of bipolar transistors of 2Т312Б type for ~ three months after their irradiation with neutron fluence Ф_0,1 = 4,3·10¹³ cm^-2 and dose of accompanying gamma radiation D =·9,1·10³ R.

The methodology and mathematical apparatus of approximate estimation of calculated characteristics of nuclear power plant with single-element electro generating channels for project works at the initial design stage are described.