The upset injecting procedure, considering the topology, dedicated for introduction into the process of the fault-tolerant integrated circuit development is presented. The procedure is fully compatible with a standard verification route. The work describes the application of the procedure under the development of the triplicated encrypting core after the AES standard.

A procedure, evaluating fault-tolerance of the layout implementation of the direct memory access controllers with local, distributed and block triple modular redundancy is suggested. A comparative analysis of the simulation results is presented.

A simulation of the experimental dose responses of the MOS detector information-bearing parameter in the conditions of gamma radiation effect of the ⁶⁰Со isotope source facilities under the dose rate ranged from 0.00011 – 39.6 rad/s is carried out. With the dose rate of 0.0082 and 0.1 rad/s volt-ampere MOS detector characteristics are measured and the input of the surface states in the dose dependence of the voltage threshold shift is defined. It is shown, that the offered model of the surface states integration allows forecasting the dependence of the dosimeter information-bearing parameter on the dose for various dose rates.

The methodology of statistical handling of the experimental data on integral circuit latch-up from heavy ions, obtained on heavy-ion accelerators is presented. The functions of time probability distribution to one latch-up and the corresponding to their modification ones for a fluence to one latch-up are offered. New approaches, estimating a failure-free operation probability in space environment are proposed on the basis of the extreme event statistics.

The research results of the Со⁶⁰ gamma-radiation effect on the parameters of double driver microcircuits of two types for MOS-transistor controlling are presented, as well as the microcircuits of one-time electrically programmable read only memory.

The responses of two Cherenkov SChDI3 detectors on subnanosecond current pulse of an electron beam are registered. The electron current pulse duration, measured with the coaxial collector display, reached t_{0.5 э} ~ (0.265…0.280) ns. The pulse durations, registered with the Cherenkov detectors № 1 and № 2, reached t_{0.5 ч1} ~ (0.375…0.390) ns and t_{0.5 ч2} ~ (0.385…0.400) ns respectively.

The research results on mass property optimization of the additional radiation protection of devices, which have critical elements against radiation resistance are offered. It is demonstrated, that by choosing the device radiation protection uneven in thickness, the mass of the additional protection might be reduced by 1.5-2 compared to even thickening of a device case across its whole surface. The examples of constructional profile of the additional protection for various number of device critical elements are provided.

The relationships are presented for a possible calculation of the irradiation time and selection of silicon of electron, hole and mixed conductivity type, taking into account the inhomogeneity of the neutron flux density and distribution of phosphorus in the starting material in order to obtain minimal deviations from target resistivity value. As a criterion for determining of the optimal irradiation time, the equality of extreme deviations from the nominal value is used.